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datasheet pleasereadtheimportantnoticeandwarningsattheendofthisdocument v2.1 www.infineon.com 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration highspeedfastigbtintrenchstop tm 5technologycopackedwith rapid1fastandsoftantiparalleldiode featuresandbenefits: highspeedf5technologyoffering: ?best-in-classefficiencyinhardswitchingandresonant topologies ?650vbreakdownvoltage ?lowgatechargeq g ?igbtcopackedwithrapid1fastandsoftantiparalleldiode ?maximumjunctiontemperature175c ?dynamicallystresstested ?qualifiedaccordingtoaec-q101 ?greenpackage(rohscompliant) ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?off-boardcharger ?on-boardcharger ?dc/dcconverter ?power-factorcorrection packagepindefinition: ?pin1-gate ?pin2&backside-collector ?pin3-emitter keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package AIKW50N65DF5 650v 50a 1.66v 175c ak50edf5 pg-to247-3 g c e 1 2 3
datasheet 2 v2.1 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 g c e 1 2 3
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datasheet 4 v2.1 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage (br)ces v ge =0v, i c =0.20ma 650 - - v collector-emitter saturation voltage cesat v ge =15.0v, i c =50.0a t vj =25c t vj =125c t vj =175c - - - 1.66 1.90 2.03 2.10 - - v diode forward voltage f v ge =0v, i f =25.0a t vj =25c t vj =125c t vj =175c - - - 1.54 1.52 1.49 1.80 - - v gate-emitter threshold voltage ge(th) i c =0.30ma, v ce = v ge 3.2 4.0 4.8 v zero gate voltage collector current k ces v ce =650v, v ge =0v t vj =25c t vj =175c - - - 1200 40 - a gate-emitter leakage current k ges v ce =0v, v ge =20v - - 100 na transconductance i fs v ce =20v, i c =50.0a - 62.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance e ies - 2800 - output capacitance e oes - 65 - reverse transfer capacitance e res - 11 - ce =25v, v ge =0v,f=1mhz pf gate charge s g v cc =520v, i c =50.0a, v ge =15v - 108.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case n e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time v d(on) - 21 - ns rise time v r - 12 - ns turn-off delay time v d(off) - 156 - ns fall time v f - 6 - ns turn-on energy g on - 0.49 - mj turn-off energy g off - 0.14 - mj total switching energy g ts - 0.63 - mj v vj =25c, v cc =400v, i c =25.0a, v ge =0.0/15.0v, r g(on) =12.0 , r g(off) =12.0 , l =30nh, c =30pf l , c fromfig.e energy losses include tail and diode reverse recovery. g c e 1 2 3
datasheet 5 v2.1 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration turn-on delay time v d(on) - 19 - ns rise time v r - 4 - ns turn-off delay time v d(off) - 173 - ns fall time v f - 10 - ns turn-on energy g on - 0.10 - mj turn-off energy g off - 0.03 - mj total switching energy g ts - 0.13 - mj v vj =25c, v cc =400v, i c =6.0a, v ge =0.0/15.0v, r g(on) =12.0 , r g(off) =12.0 , l =30nh, c =30pf l , c fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =25c diode reverse recovery time v rr - 77 - ns diode reverse recovery charge s rr - 0.68 - c diode peak reverse recovery current k rrm - 15.5 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -258 - a/s v vj =25c, v r =400v, i f =25.0a, di f /dt =1200a/s diode reverse recovery time v rr - 36 - ns diode reverse recovery charge s rr - 0.28 - c diode peak reverse recovery current k rrm - 12.5 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -759 - a/s v vj =25c, v r =400v, i f =6.0a, di f /dt =1200a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =150c turn-on delay time v d(on) - 21 - ns rise time v r - 14 - ns turn-off delay time v d(off) - 191 - ns fall time v f - 5 - ns turn-on energy g on - 0.68 - mj turn-off energy g off - 0.25 - mj total switching energy g ts - 0.93 - mj v vj =150c, v cc =400v, i c =25.0a, v ge =0.0/15.0v, r g(on) =12.0 , r g(off) =12.0 , l =30nh, c =30pf l , c fromfig.e energy losses include tail and diode reverse recovery. turn-on delay time v d(on) - 18 - ns rise time v r - 5 - ns turn-off delay time v d(off) - 229 - ns fall time v f - 13 - ns turn-on energy g on - 0.18 - mj turn-off energy g off - 0.06 - mj total switching energy g ts - 0.24 - mj v vj =150c, v cc =400v, i c =6.0a, v ge =0.0/15.0v, r g(on) =12.0 , r g(off) =12.0 , l =30nh, c =30pf l , c fromfig.e energy losses include tail and diode reverse recovery. g c e 1 2 3
datasheet 6 v2.1 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration diodecharacteristic,at t vj =150c diode reverse recovery time v rr - 123 - ns diode reverse recovery charge s rr - 1.47 - c diode peak reverse recovery current k rrm - 20.8 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -214 - a/s v vj =150c, v r =400v, i f =25.0a, di f /dt =1200a/s diode reverse recovery time v rr - 65 - ns diode reverse recovery charge s rr - 0.71 - c diode peak reverse recovery current k rrm - 19.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -462 - a/s v vj =150c, v r =400v, i f =6.0a, di f /dt =1200a/s g c e 1 2 3
datasheet 7 v2.1 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration figure 1. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 30 60 90 120 150 180 210 240 270 figure 2. collectorcurrentasafunctionofcase temperature ( v ge 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 figure 3. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 15 30 45 60 75 90 105 120 135 150 v ge = 20v 18v 15v 12v 10v 8v 7v 6v 5v figure 4. typicaloutputcharacteristic ( t vj =150c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 15 30 45 60 75 90 105 120 135 150 v ge = 20v 18v 15v 12v 10v 8v 7v 6v 5v g c e 1 2 3
datasheet 8 v2.1 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration figure 5. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 4 5 6 7 8 9 0 15 30 45 60 75 90 105 120 135 150 t vj =25c t vj =150c figure 6. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i c =6.25a i c =12.5a i c =25a i c =50a figure 7. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =12 , r g(off) =12 ,dynamic test circuit in figure e) k c ,collectorcurrent[a] t ,switchingtimes[ns] 0 30 60 90 120 150 1 10 100 1000 t d(off) t f t d(on) t r figure 8. typicalswitchingtimesasafunctionofgate resistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =25a,dynamictestcircuitin figure e) t g ,gateresistance[ ] t ,switchingtimes[ns] 5 15 25 35 45 55 65 75 85 1 10 100 1000 t d(off) t f t d(on) t r g c e 1 2 3
datasheet 9 v2.1 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration figure 9. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =25a, r g(on) =12 , r g(off) =12 ,dynamictest circuit in figure e) v vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 10. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.3ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 typ. min. max. figure 11. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =12 , r g(off) =12 , dynamic test circuit in figure e) k c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 30 60 90 120 150 0 1 2 3 4 5 6 7 8 9 10 11 e off e on e ts figure 12. typicalswitchingenergylossesasa functionofgateresistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =25a,dynamictestcircuitin figure e) t g ,gateresistance[ ] e ,switchingenergylosses[mj] 5 15 25 35 45 55 65 75 85 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 e off e on e ts g c e 1 2 3
datasheet 10 v2.1 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration figure 13. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =25a, r g(on) =12 , r g(off) =12 ,dynamic test circuit in figure e) v vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =150c, v ge =0/15v, i c =25a, r g(on) =12 , r g(off) =12 ,dynamic test circuit in figure e) ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 e off e on e ts figure 15. typicalgatecharge ( i c =50a) q g ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 v cc =130v v cc =520v figure 16. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 1 10 100 1000 1e+4 c ies c oes c res g c e 1 2 3
datasheet 11 v2.1 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration figure 17. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: i [s]: 1 0.026138 3.3e-5 2 0.118331 2.5e-4 3 0.159109 3.9e-3 4 0.181217 0.044084 5 0.065204 0.191225 figure 18. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] th(j - c) ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: i [s]: 1 0.2723102 1.3e-4 2 0.3217888 1.1e-3 3 0.4470437 0.0104944 4 0.4588573 0.1086427 figure 19. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 500 700 900 1100 1300 1500 1700 1900 40 60 80 100 120 140 160 180 t vj =25c, i f =25a t vj =150c, i f =25a figure 20. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 500 700 900 1100 1300 1500 1700 1900 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t vj =25c, i f =25a t vj =150c, i f =25a g c e 1 2 3
datasheet 12 v2.1 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration figure 21. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 500 700 900 1100 1300 1500 1700 1900 8 10 12 14 16 18 20 22 24 t vj =25c, i f =25a t vj =150c, i f =25a figure 22. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 500 700 900 1100 1300 1500 1700 1900 -400 -350 -300 -250 -200 -150 -100 -50 0 t vj =25c, i f =25a t vj =150c, i f =25a figure 23. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 12.5 25.0 37.5 50.0 62.5 75.0 t vj =25c t vj =150c figure 24. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 i f =6.25a i f =12.5a i f =25a i f =50a g c e 1 2 3
datasheet 13 v2.1 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration g c e 1 2 3 package drawing pg-to247-3
datasheet 14 v2.1 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration g c e 1 2 3 package drawing pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
datasheet 15 v2.1 2017-06-30 AIKW50N65DF5 highspeedswitchingseriesfifthgeneration revisionhistory AIKW50N65DF5 revision:2017-06-30,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.1 2017-06-30 data sheet created g c e 1 2 3 package drawing pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
trademarksofinfineontechnologiesag hvic?,ipm?,pfc?,au-convertir?,aurix?,c166?,canpak?,cipos?,cipurse?,cooldp?, coolgan?,coolir?,coolmos?,coolset?,coolsic?,dave?,di-pol?,directfet?,drblade?,easypim?, econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,ganpowir?, hexfet?,hitfet?,hybridpack?,imotion?,iram?,isoface?,isopack?,ledrivir?,litix?,mipaq?, modstack?,my-d?,novalithic?,optiga?,optimos?,origa?,powiraudio?,powirstage?,primepack?, primestack?,profet?,pro-sil?,rasic?,real3?,smartlewis?,solidflash?,spoc?, strongirfet?,supirbuck?,tempfet?,trenchstop?,tricore?,uhvic?,xhp?,xmc? trademarksupdatednovember2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. publishedby infineontechnologiesag 81726mnchen,germany ?infineontechnologiesag2017. allrightsreserved. importantnotice theinformationgiveninthisdocumentshallin noevent beregardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie).withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,infineontechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseof theproductofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityof customerstechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest infineontechnologiesoffice(www.infineon.com). warnings duetotechnicalrequirementsproductsmaycontaindangeroussubstances.forinformationonthetypesinquestion pleasecontactyournearestinfineontechnologiesoffice. exceptasotherwiseexplicitlyapprovedbyinfineontechnologiesinawrittendocumentsignedbyauthorized representativesofinfineontechnologies,infineontechnologiesproductsmay not beusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury. g c e 1 2 3 package drawing pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions

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